Sublattice reversal in GaAs/Ge/GaAs heterostructures

摘要：

We have proposed planar-type and room-temperature-operable terahertz(THz) emission devices based on the difference-frequency generation of two cavity modes in a GaAs/AlAs coupled multilayer cavity ”1”.Recently we have shown that the χ(2)(second-order nonlinear susceptibility) inversion technique introduced by face-to-face wafer bonding is useful in the construction of THz emitters ”2”.However,it should be noted that it is difficult to obtain equivalent optical thickness of two cavity layers grown on two substrates separately.Moreover,a lot of time and effort have to be spent on completely removing one side of bonded GaAs substrates by mechanical polishing and selective wet etching.

作者: Xiangmeng Lu Naoto Kumagai Yasuo Minami Takahiro Kitada

作者单位: Graduate School of Technology,Industrial and Social Sciences,Tokushima University,Tokushima 770-8506 Present address: National Institute of Advanced Industrial Science and Technology,Nagoya,Aichi 464-8

会议类型: 国内会议

会议名称: 第十二届全国分子束外延学术会议

会议地点: 太原

会议语种:英文

页码: 125-126

在线出版日期: 2017-08-15（万方平台首次上网日期，不代表论文的发表时间）