An improved DC model for AlGaN/GaN HEMTs

摘要：

　　An Improved empirical model for the DC I-V characteristics of a GaN HEMT is presented in this paper.The improvement consists in allowing the Curtice model parameters to vary with gate-source voltage.Model parameter extraction is made for a 100 μm gate-width GaN HEMT.A good agreement is obtained between modeled results and measured results.

作者: Li Shen Danting Luo Jianjun Gao

作者单位: School of Information Science and Technology, East China Normal University, Shanghai, 200062, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 123-125

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）