High Performance and Low Thermal Budget Amorphous InGaZnO Thin-Film Transistor with an Atomic-Layer-Deposited SiO2 Gate Insulator
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with an atomic-layer-deposited (ALD) SiO2 gate insulator were fabricated and compared with those with a plasma-enhanced chemical vapor deposited (PECVD) SiO2 gate insulator.It is demonstrated that the ALD SiO2 gate insulator generated much better performance of the TFT than the PECVD one.This is mainly attributed to a smaller interfacial trap density and weaker surface roughness scattering.For the un-annealed device with the ALD SiO2 gate insulator, it exhibited a very good stability under negative gate bias stress (-15 V), while maintaining superior electrical parameters such as quite high field effect electron mobility of 63.6 cm2V-1s-1, a low threshold voltage of-0.24 V, a small subthreshold swing of 0.20 V/dec, a large on/off current ratio of~108.Such a low thermal budget and high performance TFT is very attractive for flexible electronic application.
Amorphous In-Ga-Zn-O thin-film transistor atomic-layer-deposited SiO2 no post-annealing
Li-Li Zheng Qian Ma You-Hang Wang Wen-Jun Liu Shi-Jin Ding David Wei Zhang
ASIC & System State Key Laboratory, Fudan University, Shanghai 200433, China
国内会议
上海
英文
141-144
2016-04-01（万方平台首次上网日期，不代表论文的发表时间）