Total dose radiation induced changes of the floating body effects in the partially depleted SOI nMOSFETs with ultrathin gate oxide

摘要：

　　In this paper, the impacts of ionizing radiation on the gate induced floating body effects (GIFEBs) and low-frequency (LF) noise for the 130nm partially depleted silicon-on-insulator (PDSOI) N-type metal-oxide semiconductors (NMOS) transistor with an ultrathin gate oxide have been investigated.It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced.A new interpretation is proposed to explain the changes in the GIBFEs and excess noise.

关键词： total ionizing dose silicon on insulator low-frequency noise floating body effects

作者: Lihua Dai Chao Peng Zhiyuan Hu Zhengxuan Zhang

作者单位: Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 160-162

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）