PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION ULTRALOW DIELECTRIC CONSTANT FILMS USING TRIETHOXYMETHYLSILANE AND LIMONENE AS PRECURSORS

摘要：

　　Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition annealing.This paper well demonstrated the effect of LIMO/MTES flow rate ratio on the performance of the SiCO(H) film.When the flow rate ratio was 1.5, the SiCO(H) films exhibited the lowest κ value of 2.2 and extremely low leakage current density of 5.3×l0-9A/cm2 at 1 MV/cm, Young”s modulus of 4.23 GPa, and hardness of 0.55 GPa after annealing at 420℃ for 4 h in N2 ambient.

关键词： Low k SiCO(H) PECVD Annealing

作者: Zi-Jun Ding Shi-Jin Ding Wei Zhang

作者单位: School of Microelectronics, Fudan University, Shanghai 200433, CHINA

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 163-165

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）