Atomic layer deposition of Nickel using nickelocene and NH3 plasma

摘要：

　　Ni plasma enhanced atomic layer deposition(PE-ALD) using nickelocene”Ni(C5H5)2” as a precursor and NH3 plasma as a reactant was comparatively investigated.PE-ALD Ni using NH3 plasma showed low resistivity,and low C and N content.PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM), four point probe(FPP), ultraviolet photoelectron spectroscopy(UPS) and atomic-force microscopy (AFM).

作者: Yongping Wang Zijun Ding Shijing Ding

作者单位: ASIC & System State Key Laboratory, Fudan University, Shanghai 200433, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 166-168

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）