Photoelectric Characteristics of InAlAs/InGaAs/InAs Quantum Dots-in-Well between Double Barrier
An InAlAs/InGaAs/InAs quantum dots-quantum well in double barrier structure has proved best S (signal)/D (dark current) by simulated and analyzed at 3.5V and-1.3V at 300K.The InGaAs EL or PL spectrums,dark current and transient Gaussian light pulse are numerically investigated in detail.We systematically study the simulation of photocurrent spectrum based on quantum dot in well detector shows near-infrared response under different environment and finds the response can tail up to 1.70μtm.At last, a low temperature tests for the GaAs/AlAs barrier hybrid structure.The oscillation is observed at 4.2K, which is attributed to the ordered emission of the LO phonons.
Double barrier PL spectrum Gaussian light pulse numerical simulation
W.W.Wang F.M.Guo
School of Information Science Technology, East China Normal University, CHINA
国内会议
上海
英文
169-172
2016-04-01（万方平台首次上网日期，不代表论文的发表时间）