Photocurrent-voltage characteristic of resonant tunneling photodiodes

摘要：

　　The resonant tunneling photodiodes (RTDs) based on an A1GaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated.Photons with the wavelength λ=1.54 μm lead to hole accumulation close to the double barrier inducing a voltage shift of the current-voltage curve which strongly depends on the bias voltage.It was found that the peak current shifting to high voltage as the temperature decreased.In addition, the capacity-voltage (C-V) characteristic was simulated under different work temperatures and results showed the higher capacitance got at low bias (about 0.3 V) and room temperature.

关键词： Resonant tunneling diode double barrier resonant tunneling peak-valley current ratio I-V peak current

作者: H.D.Lu W.G.Ning B.Zhang E M.Guo

作者单位: School of Information Science Technology, East China Normal University, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 178-181

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）