A simple parameter extraction method for PIN photodiode

A parameter extraction method for small signal model of the PIN photodiodes, which combines the analytical method and empirical optimization procedure, is developed in this paper.The values of the intrinsic and extrinsic parameters of the PIN photodiodes are extracted by using a set of closed form expressions derived from output reflection coefficient on wafer measurement.An excellent fit between measured and simulated S-parameters is obtained up to 40GHz.
Zhixia Xu Jianjun Gao
East China Normal University, Shanghai 200241, China
国内会议
上海
英文
191-194
2016-04-01(万方平台首次上网日期,不代表论文的发表时间)