Influence of Post-annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-channel/Al2O3-dielectric

摘要：

　　The TFTs with atomic layer deposited ZnO-channe1/Al2O3-dielectric were fabricated under the maximum process temperature of 200 ℃.We compared the influences of annealing temperature and time on the device performance.Excellent electrical characteristics of the TFTs were demonstrated after O2 annealing at 200 ℃ for 35 mins.

作者: You-Hang Wang He-Mei Zheng Shi-Jin Ding

作者单位: State Key Laboratory of ASIC and System, School of Microelectronics,Fudan University, Shanghai 200433, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 199-201

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）