High Linearity Low Noise Amplifiers Design

摘要：

　　This report presents a design method of high linearity Low Noise Amplifiers, i.e., the modified derivative superposition.The brief theory of the methods is also explained in this report.The design is implemented in TSMC 0.18μrn CMOS technology.The simulation shows that the LNA using the modified derivative superposition method achieved +6.06dBm IIP3, with 18.53dB gain, 1.75 NF,-11.52dB S11,-41.88dB S12,2.605mA@1.8V power consumption.

关键词： LNA MDS Linearity

作者: Wenxin Wu Jianjun Zhou Jiaweichen

作者单位: Center for Analog/RF Integrated Circuit, Shanghai Jiao Tong University ,Shanghai, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 221-223

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）