Low-Temperature Ohmic Contact Formation in GaN High Electron Mobility Transistors Using Microwave Annealing

摘要：

　　In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs).Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic contact resistance with much smoother surface of ohmic contacts.The spike mechanism is observed in our ohmic contact annealed by microwave under a low-temperature condition.Besides, MWA-HEMTs have higher ION/IoFF ratio and lower gate leakage current than the fabricated RTA-HEMTs in this letter.

作者: Lin-Qing Zhang Jin-Shan Shi Hong-Fan Huang Xiao-Yong Liu Peng-Fei Wang

作者单位: ASIC & System State Key Laboratory, Fudan University, Shanghai 201203, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 238-241

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）