Impacts of Thermal Atomic Layer Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

摘要：

　　Thermal atomic layer deposition (ALD) grown AlN passivation layer is applied on A1GaN/GaN-on-Si HEMT and the impacts on drive current and leakage current are investigated.The thermal ALD grown 30nm amorphous AlN results in a suppressed off-state leakage, however, its drive current is unchanged.It was also observed by nano-beam diffraction method that thermal ALD amorphous AlN layer barely enhanced the polarization.On the other hand, the PECVD deposited SiN layer enhanced the polarization and resulted in an improved drive current.The CV measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

作者: Sheng-Xun Zhao Xiao-Yong Liu Lin-Qing Zhang Jin-Shan Shi Hong-Fan Huang Peng-Fei Wang

作者单位: State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 242-245

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）