The photoinduced voltage shift behavior in three-barrier resonant tunneling structure

摘要：

　　Resonant tunneling structures show negative differential resistance and enables many unique applications.Most researches have focused on structures with one or two barriers.In this paper, a three-barrier, two-well resonant tunneling structure integrated with a 1.2-μm-thick n-type GaAs layer are investigated numerically.The results show that the coupling between the energy level in the incident well and that in the central quantum well is the key point in understanding the origin of the current-voltage multi-peak at reverse bias.A photoinduced voltage shift manifests that the 1.2-μm-thick, slightly doped n-GaAs layer plays an important role in enhancing photoelectric sensitivity.

作者: W.G.Ning J.Song W.W.Wang F.M.Guo

作者单位: School of Information Science Technology, East China Normal University, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 259-262

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）