Resonant Tunneling Effect of InAs Quantum Dots

摘要：

　　InAs quantum dots grown on InA1As/InP were discussed by Lumerical software in this paper.By discussing current-voltage characteristics curve (I-V) and capacity-voltage characteristics curve (C-V), we found that resonant tunneling effect of InAs QDs and barrier of InP and InA1As result in the asymmetry of I-V.

作者: B.Zhang W.G.Ning F.M.Guo

作者单位: Shanghai Key Laboratory of Multidimensional Information Processing, Key Laboratory of Polar Materials & Devices, School of Information Science Technology, East China Normal University, China

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 277-278

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）