A Novel Approach to Extracting Extrinsic Resistances for Equivalent Circuit Model of Nanoscale MOSFET

摘要：

1 Introduction The parasitic resistances caused by variations in the layout, process and long-term device degradation are crucial parameters for characterization and modeling in radio frequency (RF) MOSFETs, because they strongly influence the input/output impedance and noise performance of RF MOSFET device”1”.

作者: Panpan Yu Ying Zhou Ling Sun Jianiun Gao

作者单位: School of Information Science and Technology, East China Normal University, Shanghai 200062, People” Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong, 226019, People”s Republic of Chi

会议类型: 国内会议

会议名称: 2016年上海市研究生学术论坛——电子科学与技术

会议地点: 上海

会议语种:英文

页码: 324-329

在线出版日期: 2016-04-01（万方平台首次上网日期，不代表论文的发表时间）