Epitaxial growth and high temperature transport properties of InAlN/GaN heterostructures

摘要：

InAlN/GaN heterstructures have attracted general attention due to their high spontaneous polarization and the possibility to improve the device reliability ”1”.Until now,although the InAN/GaN HEMTs with a high current gain cutoff frequency of 400 GHz have already been reported,several questions related to material quality such as thermal stability at high temperature,the trapping effects,and the relevant device performance reliability are still open.Especially when devices are operated at conditions of high temperature and/or high electrical filed ”2”,electrons are trapped and thus the drain current density of the HEMTs is degraded.This is one of the major obstacles for high temperature and high power electronics.

关键词： InAlN/GaN heterostructures 2DEG MOCVD transport properties

作者: 杨学林 桑玲 程建朋 张洁 郭磊 许福军 王新强 沈波

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 26-27

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）