Stress effect on Al and Ga incorporation in AlGaN epitaxial growth

摘要：

The effect of misfit strain on the incorporation of Al and Ga elements in AlGaN films was investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM).Two series of samples (series A and B) were prepared for the experiments.All the samples were grown on 2-in.(0001)sapphire substrates by low pressure metal organic vapor phase epitaxy(LP-MOVPE),using a vertical close-coupled showerhead(CCS)system.

作者: He Chenguang Qin Zhixin Xu Fujun Shen Bo

作者单位: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking Un State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking Un

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 33-33

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）