High-quality AlN growth on nitrided sapphire combined with low-and high-temperature alternation technique
Epitaxial growth of high-quality AlN films have been realized adopting nitridation for sapphire combined with low-and high-temperature (LT-HT) alternation technique by metal organic chemical vapor deposition (MOCVD).It is found that the surface morphology and crystal quality can be greatly improved with the X-ray diffraction (XRD) ω-scan futll width at half maximum (FWHM) values of 130 and 457 arcsec severally for (0002) and (10-12) peaks.
AlN Nitridation
许福军 王嘉铭 何晨光 张立胜 秦志新 沈波
国内会议
苏州
英文
36-36
2015-10-30（万方平台首次上网日期，不代表论文的发表时间）