Effect of Ⅴ-shaped Pit Size on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes
Despite continuous progress of blue InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LED),many physical mechanisms lie still under the debate within the research community.Among them,understanding the role of Ⅴ-shaped pits,which are the inverted hexagonal pits embedded in MQW structures,is a very important issue and thus requires further investigation.Le et al.reported that the Ⅴ-shaped pits significantly deteriorate the performance of InGaN/GaN LEDs ”1”.On the contrary,it was reported that the Ⅴ-shaped pits can decrease the reverse leakage current of LED ”2”.
GaN LED Ⅴ-shaped pit
ZhiJue Quan JunLin Liu Fang Fang XiaoLan Wang ChunLan Mo FengYi Jiang
National Institute of LED on Si Substrate,Nanchang University,235 Nan Jing East Road,Nanchang,China 330047
国内会议
苏州
英文
86-87
2015-10-30（万方平台首次上网日期，不代表论文的发表时间）