High-Speed Gallium Nitride Schottky Barrier Diodes for Microwave Power Transmission

摘要：

As one of the wireless power transmission technologies,the technology of microwave power transmission has been attracting much attention owing to the increasing demands for the various wireless technologies,such as electric vehicle power charging,energy harvesting,ubiquitous power source,pilotless plane,wireless network,and wireless power distribution within a building.

关键词： GaN Schottky barrier diode rectenna circuit microwave power transmission

作者: Jin-Ping Ao

作者单位: Institute of Technology and Science,Tokushima University 2-1 Minami-Josanjima,Tokushima 770-8506,Japan

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 95-96

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）