Systematic investigation of interface and bulk traps in LPCVD-SiNx/AlGaN/GaN structure

摘要：

GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs)have become increasingly attractive in power switching applications thanks to the lower gate leakage current and larger gate swing compared with conventional Schottky gate HEMTs.”1-3” LPCVD grown silicon nitride (LPCVD-SiNx),thanks to the high temperature and free of plasma induced damage to (Al)GaN surface during growth,emerges as attractive material for the gate dielectric.However,limited works have been devoted to the characteristics of the trap distribution at LPCVD-SiNx/Ⅲ-nitrides interface.

关键词： AlGaN/GaN heterostructure LPCVD-SiNx

作者: Qilong Bao Sen Huang Xinghua Wang Ke Wei Yankui Li Chengyue Yang Haojie Jiang Junfeng Li Anqi Hu Xuelin Yang Bo Shen Xinyu Liu Chao Zhao

作者单位: Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chi School of Physics,Peking University,Beijing 100871,China

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 120-121

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）