Towards high performance a-IGZO thin film transistors and circuits

摘要：

Transparent oxide-based thin film transistors (TFTs) have been attracting much attention recently due to their excellent electrical and optical characteristics for display applications.In particular,amorphous indium-gallium-zinc oxide (a-IGZO) TFTs are intensively investigated as a replacement for silicon-based TFTs in active matrix displays as they could simultaneously offer high channel electron mobility,high optical transparency,low off-state leakage and low processing temperature.

作者: Hai Lu Rong Zhang Youdou Zheng

作者单位: School of Electronics Science and Engineering,Nanjing University,Nanjing 210093,China

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 146-146

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）