Spectra analysis on the origin of wavelength shift of InGaN based LEDs at high injection levels

摘要：

The mechanism of wavelength shift is very complicate in InGaN based LEDs due to the existing of piezoelectric field and localized states.At a constant temperature and low injection level,the wavelength may blue shifted or red shifted with increasing current;while at high injection level,the wavelength always blue shifted with increasing current.

关键词： InGaN LED wavelength shift band filling piezoelectric field screening

作者: Zhang Jianli Liu Junlin Mo Chunlan Wang Xiaolan Wang Guangxu Wu Xiaoming Quan Zhijue Jiang Fengyi

作者单位: National Institute of LED on Si substrate,Nanchang University,Nanchang,330047

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 203-204

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）