Analyzing the different droop behaviors of two InGaN/GaN multiple quantum well green light-emitting diodes
One of the most significant and enduring challenges facing high-power GaN-based light-emitting diodes (LEDs) is the efficiency droop,i.e.the decrease of luminescence efficiency with increasing driving current,which constitutes a fundamental obstacle for widespread applications of GaN-based solid-state fighting devices as high-brightness sources for illumination.For the c-plane growth InGaN/GaN multiple quantum well (MQW) structures,the spectral range of LEDs emission can be extended to a longer wavelength into green region by either incorporating more In atoms into InGaN alloy layers or increasing the QW layer thickness.Some research groups have studied the influence of structure parameter,such as In content or well layer thickness,on the efficiency droop.”1-3” However,the peak emission wavelength of LED would vary if these structure parameters are changed.
InGaN/GaN multiple quantum well Green LEDs Effiency droop Localization effect
刘炜 赵德刚 江德生
国内会议
苏州
英文
214-215
2015-10-30（万方平台首次上网日期，不代表论文的发表时间）