Investigation of AlGaN Avalanche Photodiodes with Al0.45Ga0.55N Multiplication Layer

摘要：

Solar-blind avalanche photodiodes (APDs) can detect very weak ultraviolet (UV) signals in the solar-blind range (λ ＜ 280 nm) under intense background radiation.Wurzite AlGaN alloys are promising materials for solar-blind APDs with an Al composition of higher than 40％.Although great progress has been made,the development of AlGaN solar-blind APDs has lagged far behind that of GaN APDs,”1” and most groups have focused on realizing very high-gain APDs.

关键词： AlGaN avalanche photodiodes excess noise factor

作者: Mengjun Hou Zhixin Qin

作者单位: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing,100871

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 247-248

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）