Novel Normally-Off AlGaN/GaN MOS-HEMT Using the PN Junctions Rectification Concept

摘要：

AlGaN/GaN high-electron-mobility transistors (HEMTs) are promising candidates for next-generation power switches with high-density two-dimensional electron gas (2DEG) and high critical electric field (E-field)”1”.Because of the inherent fail-safe operation,enhancement-mode (E-mode) transistors are preferred.One approach to realize E-mode is Metal-Oxide-Semiconductor (MOS) recessed gate structures ”2”.Moreover,the OFF-state breakdown voltage (BV) is the main limitation of the GaN based power devices” performance.Recently,the polarization junction (PJ) HEMT has been proposed to increase the BV”3”.However,large gate leakage current and small gate swing are the major drawbacks.

关键词： AlGaN/GaN HEMT polarization junction 2DHG PN Junctions rectification Concept

作者: Chao Yang Jiayun Xiong Jie Wei Junfeng Wu Fu Peng Bo Zhang Xiaorong Luo

作者单位: University of Electronic Science and Technology of China,Chengdu,CN

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 251-252

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）