Analysis of Off-state Breakdown and Leakage Current Transport Behaviors in AlGaN/GaN HEMTs

摘要：

AlGaN/GaN high electron mobility transistors (HEMTs) exhibit great potential for high-frequency and high-power microwave applications due to the intrinsic material advantages of GaN-based semiconductors.However,to date,the majority of reported off-state breakdown voltages of AlGaN/GaN HEMTs are still considerably below their theoretical values.With the improvement of processing technologies and the employment of new device structures like field plate and insulated gate,surface leakage current and peak electrical field near the gate edge have been effectively suppressed.

关键词： AlGaN/GaN HEMTs drain-current injection tests off-state breakdown

作者: Weizong Xu Hai Lu Fangfang Ren Dunjun Chen Rong Zhang Youdou Zheng Ke Wei Xinyu Liu

作者单位: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electr Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 253-254

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）