Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs

摘要：

Due to the excellent physical properties,such as high breakdown field,high electron saturation velocity,and good thermal stability,GaN-based high electron mobility transistors (HEMTs) have emerged as the most promising candidates for the high power and high frequency applications.

关键词： Gate leakage current degradation Lattice-matched In0.17Al0.83N/GaN Surface acceptor-like traps

作者: Dawei Yan Jian Ren Wenjie Mou Yang Zhai Xiaofeng Gu

作者单位: Key Laboratory of Advanced Process Control for Light Industry(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi,214122

会议类型: 国内会议

会议名称: 第一届全国宽禁带半导体学术及应用技术会议

会议地点: 苏州

会议语种:英文

页码: 277-278

在线出版日期: 2015-10-30（万方平台首次上网日期，不代表论文的发表时间）