The Effects of Neodymium Incorporation on NdxIn1-xO3 Thin-Film Transistors
Amorphous oxide semiconductors(AOSs) are considered as the most promising channel materials for thin-film transistors(TFTs) due to their advantages of high mobility,good transparency in the visible region,excellent tmiformity over large areas and low-temperature process.”1” In the past few years,a lot of researches about AOS TFT using different active channels have been reported,such as In-Ga-Zn-O(IGZO),In-Zn-O(IZO),Zn-Sn-O(ZTO),Sn-Ga-Zn-O(ZTGO) and so on.However,the stability of ZnO-based TFT devices still remains the most critical issue to be solved.Several researches have been reported in order to understand the deterioration of bias-induced instabilities.”2”
AOS TFT High-mobility neodymium-substituted indium oxide
Zhenguo Lin Linfeng Lan Junbiao Peng
State Key Laboratory of Luminescent Materials and Devices(South China University of Technology),Guangzhou 510640,China
国内会议
苏州
英文
284-284
2015-10-30（万方平台首次上网日期，不代表论文的发表时间）