Ⅴ-defects formation in MOCVD-grown (In)GaN surfaces
Introduction In this paper we report on the Ⅴ-defects ”1” formation on MOCVD-grown (In)GaN surfaces under different growth conditions.The size and density of Ⅴ-defect on GaN surfaces is studied by changing growth conditions including temperature,precursor and carrier gas.It is found that when GaN is grown with triethylgallium (TEGa),the both density and size of Ⅴ-defects decrease with growth temperature.When grown with trimethylingallium (TMGa),the Ⅴ-defect size decreases with increasing growth temperature,while the Ⅴ-defect density remains unchanged.The Ⅴ-defect density and size are both smaller for GaN grown with TMGa,compared with those of TEGa.
Ⅴ-defect surface roughness (In)GaN MOCVD
Feng Zhang Masao Ikeda Jianping Liu Shuming Zhang Kun Zhou AiqinTian Yang Cheng Hui Yang
Suzhou Institute of Nano-Tech and Nano-Bionics,CAS,Suzhou,215123;Key Laboratory of Nano-Device and Applications,CAS,Suzhou,15123
国内会议
苏州
英文
305-306
2015-10-30（万方平台首次上网日期，不代表论文的发表时间）