Hydrogenated Heterojunction p-type Cz Silicon Solar Cells with Record Open Circuit Voltages Over 700 mV

摘要：

Silicon Heterojunction Solar Cells Excellent surface passivation of a-Si:H High VOCs of up to 750 mV ”1” The entire device can be fabricated at temperatures below 200 °C Avoid degradation of bulk lifetime in low-quality silicon Current State of the Technology-Record Efficiencies

作者: Brett Hallam Daniel Chen Moonyong Kim Stuart Wenham Jianwei Shi Zachary Holman Roland Einhaus

作者单位: UNSW Sydney UNSW Sydney,NSW,Australia Arizona State University,Tempe,Arizona,USA Apollon Solar,Lyon,France

会议类型: 国内会议

会议名称: 第十三届全国太阳级硅及光伏发电研讨会

会议地点: 徐州

会议语种:英文

页码: 1-19

在线出版日期: 2017-11-16（万方平台首次上网日期，不代表论文的发表时间）