A synapse memristor model with forgetting effect

摘要：

　　In this Letter we improved the ion diffusion term proposed in literature ”13” and redesigned the previous model as a dynamical model with two more internal state variables ”forgetting rate” and ”retention” besides the original variable ”conductance”.The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor.And different from the previous model, the transition from short term memory to long term memory is also defined by the new model.Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one.

关键词： Memristor Ion diffusion Forgetting Long term memory

作者: Ling Chen Chuandong Li Tingwen Huang Yiran Chen Shiping Wen Jiangtao Qi

作者单位: The College of Computer, Chongqing University, Chongqing 400044, China Texas A & M University at Qatar, Doha 5825, Qatar Electrical and Computer Engineering, University of Pittsburgh, PA 15261, USA School of Automation, Huazhong Universi1ty of Science and Technology, Wuhan 430074, China

会议类型: 国内会议

会议名称: 西南大学2014年全国博士生学术论坛(电子技术与信息科学领域)

会议地点: 重庆

会议语种:英文

页码: 272-277

在线出版日期: 2014-12-01（万方平台首次上网日期，不代表论文的发表时间）