Single-event Sensitivity Analysis of 65nm DICE Memory Cell

摘要：

　　The dual interlocked cell (DICE) is known immune to single node strike because of its redundant structure.However, it is sensitive to multiple nodes strike.With the technology scaling down, the probability of single event strike on multiple nodes increases.Hence, the hardened efficiency of DICE decreases with device size shrinking.A three dimensional (3D) device/circuit mixed model is constructed using technology computer aided design (TCAD), which is used to investigate the sensitivity between the sensitive node pairs in DICE cell and the effect of distance between the sensitive pair on upset LET threshold in 65nm DICE.The results indicate that the critical charge of a sensitive node pair is very low in 65 nm process, and the increasing of the distance between the sensitive nodes is still effective to raise the LET threshold for SEU.

关键词： DICE single event upset (SEU) sensitive node pair charge sharing upset LET threshold

作者: Zhang ChengCai Sun YongJie Huang PengCheng Chen JianJun Deng Quan

作者单位: School of Computer Science,National University of Defense Technology, Changsha 410073, China

会议类型: 国内会议

会议名称: 第十八届计算机工程与工艺年会暨第四届微处理器技术论坛

会议地点: 贵阳

会议语种:英文

页码: 258-263

在线出版日期: 2014-07-31（万方平台首次上网日期，不代表论文的发表时间）