Fast Speed LIGBT with N-region Controlled Segmented Anode
A novel n-region controlled segmented anode LIGBT on SOI substrate is proposed and discussed.The n-region controlled segmented anode concept makes this new structure have lower on-state voltage drop during conducting state and have two effective paths for electrons extracting during turn-off-state.As simulation results shown,the turn-off time is 94.8%shorter than that of conventional one and 47.8%shorter than that of state-of-the-art NCA-LIGBT which we have presented earlier.For drive application,the proposed LIGBT has much lower total power loss than that of conventional and NCA-LIGBT.The proposed device can be fabricated by the conventional SOI high voltage IC process,has a large scope of fabrication parameter difference and it is a promising device used in low/middle voltage power ICs.
Turn-off time On-state voltage drop NDR Power loss Power ICs
Wensuo Chen Ruijin Liao Yi Zhong Peijian Zhang Rongkan Liu Yukui Liu Tian Xiao Yong Liu
Chongqing Semi-chip Electronics Co.,Ltd,Chongqing 401332,China;State Key Laboratory of Power Transmi State Key Laboratory of Power Transmission Equipment & System Security and New Technology,Chongqing Chongqing Semi-chip Electronics Co.,Ltd,Chongqing 401332,China
国内会议
北京
英文
1-6
2015-04-18（万方平台首次上网日期，不代表论文的发表时间）