Effect on thermoelectric preformance of Cu2Se by Zn-, Ni-, Fe-,In-or Sm-doping
Cu1.99A0.01Se (A =Cu, Zn, Ni, Fe, In, Sin) alloys with high thermoelectric performance were prepared through a conventional melting, ball milling and quenching route, followed by a spark plasma sintering technique.Element doping do not change the crystal structure of Cu2Se.All the samples show p-type conduction.The substitution of Cu by A atoms in the Cu2Se reduced electrical resistivity and modified the carrier concentration, leading to a significant increase of power factor.The lattice distortion,the point defect and the grain boundaries formed broad-based phonon scattering centers, resulting in extremely low thermal conductivity of serials of Cu1.99A0.01Se samples.Improved thermoelectric performance was achieved for all of the samples except In-doped one compared to the pure Cu2Se sample.Higher figure of merit ZT values were achieved 1.25, 1.51, 1.07 and 1.07 for Zn-, Ni-, Fe-and Sin-doped samples at 823K, respectively.
thermoelectric properties Cu2Se element doping
彭鹏 龚著男 刘福生 李均钦 敖伟琴
深圳大学材料学院,深圳市特种功能材料重点实验室,深圳,518060
国内会议
桂林
英文
126-129
2015-11-03（万方平台首次上网日期，不代表论文的发表时间）