Effect of the SiCl4 flow on SiBN coating deposition kinetic and mechanism from SiCl4-BCl3-NH3-H2-Ar system
SiBN coating was deposited by low pressure chemical vapor deposition (LPCVD) using SiCl4-BCl3-NH3-H2-Ar gas system.The effect of the SiCl4 flow on deposition kinetic and mechanism was investigated.Results show that deposition rate increases at first and then decreases with the increase of SiCl4 flow.The surface of the coating is an uniform cauliflower-like structure at the SiCl4 flow rate of 10 ml/min and 20 ml/min.The surface is covered with small spherical particles when the flow rate is 30 ml/min.The coatings deposited at various SiCl4 flow rates are all amorphous and contain Si, B, N and O elements.The main bonding states are B-N, Si-N and N-O.B element and B-N bonding decrease with the decrease of SiCl4 flow rate, while Si element and Si-N bonding increase.The main deposition mechanism refers to two parallel reactions of BCl3+NH3 and SiCl4+NH3.The deposition process is mainly controlled by the reaction of BCl3+NH3.
SiBN coating LPCVD SiCl4 flow Deposition mechanism
Chao Chen Hailong Qin Yongsheng Liu Zan Li Nan Chai Laifei Cheng Litong Zhang
Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi”an, Shaanxi 710072, China
国内会议
长沙
英文
48-54
2016-11-11（万方平台首次上网日期，不代表论文的发表时间）