Research on GaAs-based resonant tunneling diode”s temperature characteristics

摘要：

　　The temperature performance of the improved new structure of resonance tunneling diode device is tested.By using the large-sized high-low tester and the analyzer of semiconductor properties,the Ⅰ-Ⅴ characteristics are tested under high-low test from-30 ℃ to 90℃ with step of 5 ℃,and obtained under different temperatures.With characteristic changes discussed with different parameters and changing-temperatures through Ⅰ-Ⅴ curve testing results,we can conclude that the current changes linearly as temperature changes in the second positive resistance zone,which can be used to produce temperature sensor.

关键词： Resonant tunneling diodes Temperature Ⅳ PVCR

作者: Li Nana Li Jinming Ma Youchun

作者单位: National Key laboratory for Electronic Measurement Technology,North University of China,Taiyuan 0300 National Key laboratory for Electronic Measurement Technology,North University of China,Taiyuan 0300

会议类型: 国内会议

会议名称: 长江2011国际医学影像物理和工程应用大会暨第六届中国医学影像物理学术年会

会议地点: 杭州

会议语种:英文

页码: 176-180

在线出版日期: 2011-10-22（万方平台首次上网日期，不代表论文的发表时间）