Paired-pulse facilitation achieved in proton/electron hybrid double electrode layer IGZO synaptic transistors
Self-assembled Indium-gallium-zinc-oxide artificial synaptic transistors have been fabricated.The paired-pulse-induced responses of such transistors have been demonstrated and it is surprisingly similar to the paired-pulse facilitation of biological synapses.A positive voltage pulse (spike) applied on the gate electrode promotes protons into the SiO2/IGZO interface, and the protons are gradually released after the pulse is removed.When the synaptic transistor is stimulated with a paired of electrical pulses,the drain-to-source current induced by the latter pulse is larger than that induced by the former pulse.Such behavior becomes weaken when the interval time between two adjacent pulses increases, while with longer pulse duration, this behavior would strengthen gradually.The effect of environmental temperatures on PPF is discussed in detail.
Paired-pulse facilitation Electric-double-layer Synaptic transistors Protonic/Electronic Hybrid
Li Qiang Guo Jianning Ding Li Qiang Zhu
Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013, People”s Republic of Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201
国内会议
宁波
英文
886-899
2014-11-11（万方平台首次上网日期，不代表论文的发表时间）