The Formation of Nano Tunnel Inside Resist Film in Laser Interference Lithography
Two 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form i-line photoresists.In the laser interference lithography experiments of one of the photorsists,elliptic cylindrical nano tunnels aligned in the inner of the resist film.The shape and size of the nano tunnels keep unchanged even under increased exposure dose,indicating that the exposure energy is confined within the tunnel space.The formation of the nano-tunnel is resulted from the permeation of the developer into the film.
photoresist PHS 2,1,4-DNQ sulfonate laser interference lithography tunnel
魏琪 王力元
北京师范大学化学学院,北京 100875
国内会议
北京
英文
71-74
2014-11-01（万方平台首次上网日期，不代表论文的发表时间）