A Novel twist grain boundary in AlN Grown by HVPE
Wurtzite aluminum nitride (AlN), with a direct band gap of approximately 6.2ev and high thermal conductivity1,2 (2.85 W/cm K), is a promising material for substrate, deep-ultraviolet light-emitting diodes (UV-LED), surface acoustic wave device, and high-frequency electronic devices.Progress, however, is still challenged by high density of one-diamension defects.3,Besides,the coincidence sites lattice (CSL) grain boundary is also a kind of usual planar defect in group-Ⅲnitrides.In this work, we reported ∑ 13 twist grain boundary in AlN grown by HVPE at 1400℃.According to its characterizations by scanning electron microscope (SEM), selected-area electron diffraction pattern (SAED) and high-resolution transmission electron microscopy (HRTEM), we identified the grain boundary is ”0001”/(0001)27.5°.Additionally, we also used CSL theory and Molecular Dynamics to analysis its atomic structure and interface energy, forit has been reported that it can enhance the materials” conductivity, increase the leakage current of positive channel field effect transistors, and affect the electronic properties by introducing gap states in other materials.
Jingjing Zhao Xujun Su Ting Liu Xiaojiong Gong Jun Huang Jianfeng Wang Jicai Zhang Jinping Zhang Ke Xu
Suzhou institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
国内会议
贵阳
英文
129-130
2014-07-01（万方平台首次上网日期，不代表论文的发表时间）