Role of V-defect in InGaN-based light-emitting diodes

摘要：

　　The effect of quantum well (QW) number on performances of InGaN/GaN MQW LEDs has been investigated.It is observed that V-defects increase in density and averaged size with more periods of QWs, resulting in larger reverse-bias leakage current and lower emission efficiency of LEDs.CAFM measurements demonstrate that V-defects may preferentially capture carriers, subsequently enhance local current and nonradiative recombinations at associated TD lines.

作者: L.C.Le J.J.Zhu H.Wang S.M.Zhang H.Yang D.G.Zhao D.S.Jiang L.Li L.L.Wu P.Chen Z.S.Liu Z.C.Li Y.M.Fan

作者单位: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of S Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences,Suzhou, 215125, China Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences,Suzhou, 215125, China;St

会议类型: 国内会议

会议名称: 第十四届全国固体薄膜学术会议

会议地点: 贵阳

会议语种:英文

页码: 134-136

在线出版日期: 2014-07-01（万方平台首次上网日期，不代表论文的发表时间）