Effect of 3C-SiC Intermediate Layer in GaN-based Light Emitting Diodes Grown on Si Substrate
GaN-based light emitting diodes (LEDs) have been grown by metal-organic chemical vapor deposition on Si substrate with and without 3C-SiC intermediate layer (IL).Structural property has been characterized through atomic force microscope and X-ray diffraction (XRD) measurements.It has been revealed that a significant improvement in crystalline quality of GaN epilayer can be achieved by using 3C-SiC as IL.Regarding electrical and optical characteristics,the LEDs with 3C-SiC IL have much smaller leakage current and higher light output power than the LEDs without IL.As a result,at an injection current of 20 mA,a double enhancement of light output power has been realized.Nevertheless,the better performance of LEDs using 3C-SiC IL can be contributed to both the quality improvement of epitaxial layers and enhancement in the light extraction efficiency.
Youhua Zhu Meiyu Wang Shuxin Tan Jing Huang Xinglong Guo Min Shi
School of Electronics and Information,Nantong University SeYuan Road No.9,Nantong,Jiangsu Province,China
国内会议
深圳
英文
1-4
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）