Research of a type of GaN-based UV Detector
A type of GaN-based UV detector is introduced in this paper,which is a metal-semiconductor-metal (MSM) UV detector,consisting of sapphire substrate,AlxGa1-xN buffer layer and GaN-based active layer.The buffer layer and active layer are grown on the substrate by metal organic chemical vapor deposition (MOCVD),and the two layers are all p-type Mg-doped.While,AlxGa1-xN buffer layer is divided into different sections because of the x value and doping concentration,the layer is exponential doping from 1018cm-3 to 1016cm-3.In the paper,the GaN relative properties and material growing process,the buffer layer structure and grow process,and the detector properties are introduced in detail in the paper.The detector dark current and responsibility are tested,the result shows that the detector has better performance than other detectors.Furthermore,the detector advantages and applications are given.
Su Ling-ai Chen Liang Shen Yang Xu Zhen-bao Zhang shu-qin Jin Shang-zhong
Institute of Optoelectronics Technology,China Jiliang University No.258 Xueyuan Road,Hangzhou,Zhejiang Province
国内会议
深圳
英文
1-4
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）