Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes
Recently,our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs.A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow.Using silicon-doped AlGaN MQWs,the internal quantum efficiency (IQE) has been increased by 41% due to the improvement of crystal and interface quality.An easy-facilitative Al reflector technique has been also proposed to enhance the light extraction efficiency (LEE).We obtained light output power (LOP) of 6.31 mW for the 280-nm LED at 100 mA,and realized optical pumping stimulated emission at 288 nm.
Yanan Guo Yun Zhang Junxi Wang Jianchang Yan Yingdong Tian Xiang Chen Lili Sun Tongbo Wei Jinmin Li
Institute of Semiconductors,Chinese Academy of Sciences No.A35,Qinghua East Road,Haidian District,Beijing P R China
国内会议
深圳
英文
1-5
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）