Dual color emission assisted by V-pits in InGaN/GaN multiple quantum well light emitting diodes

摘要：

　　We have applied v-pits to serve as current tunneling channels to laterally inject the carriers into two sets of InGaN/GaN MQWs.By properly adjusting the v-pits structure and configuration of two sets of InGaN/GaN MQWs,we can unambiguously demonstrate stable two color emission from one LED device and weight of two color emission can also be properly controlled.This technique could be promising to fabricate integrated two or even three color emission white light emitters without using phosphors in the near future.

作者: Heng Li Yang-Da Shih Feng Meng Lih-Ren Chen Tien-chang Lu

作者单位: Department of Photonics,National Chiao Tung University,Hsinchu city,Taiwan Focus Lightings Tech.Inc.,Suzhou Industrial Park,China

会议类型: 国内会议

会议名称: 第十二届中国国际半导体照明论坛

会议地点: 深圳

会议语种:英文

页码: 1-3

在线出版日期: 2015-11-02（万方平台首次上网日期，不代表论文的发表时间）