Structural characterization of hexagonal GaN thin films grown by MOCVD on 4H-SiC substrate
A Si-doped GaN films was,grown on 4H-SiC by MOCVD.It was found that the compressively strained layer of the film can be relaxed and surface structural quality can be improved by increasing the thickness of Si-doped GaN film.The critical thickness of beginning of two-dimension growth of GaN on 4H-SiC substrate by metal-organic chemical vapor deposition (MOCVD) has been systematically studied.We optimized growth time of GaN layer so that the GaN layer structral quality can be improved and the root mean square (RMS) roughness of surface can be reduced.With suitable growth time of GaN layer,crack-free 600 nm GaN was obtained and the full-width at half-maximum (FWHM) of (002) plane rocking curve measured by double crystal X-ray diffraction (DCXRD) was as low as 279.6 arcsec.This kind of film can be used as a high-quality buffer layer between the substrate and epitaxial layer.
silicon carbide metal-organic chemical vapor deposition X-ray diffraction
Heng Zhang Longfei Xiao Shuang Qu Chengxin Wang Xiaobo Hu Xiangang Xu
State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,P.R.China Shandong Inspur Huaguang Optoelectronics Co.,Ltd.,Jinan 250101,P.R.China State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,P.R.China;Shandong Inspur
国内会议
深圳
英文
1-15
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）