Thermal analysis and reliability evaluation on high power Flip chip LED

摘要：

　　We showed a detailed thermal simulation of a high power flip-chip packaged LED,simulation results show that the junction temperature of the LED is more sensitive to the adhesive layer material between the Si substrate and the1000μm thick Cu heatsink,and less sensitive to the bonding ball material and the heatsink material.Otherwise,three groups of aging tests were conducted on high power flip chip LEDs,according to the linear regression analysis,the extrapolated lifetime of the high power flip chip LEDs at 25℃ is 37718hours,we also obtain an acceleration factor 70.5 of resulting in a thermal activation energy of Ea=0.35eV using Arrhenius function.

关键词： high power flip-chip LED thermal simulation reliability aging

作者: LU Guo-guang HAO Ming-ming Lai Can-xiong Yao Bin

作者单位: The Fifth Research Institute of MIIT,P.R.China,Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guang Zhou510610,P.R.China

会议类型: 国内会议

会议名称: 第十二届中国国际半导体照明论坛

会议地点: 深圳

会议语种:英文

页码: 1-4

在线出版日期: 2015-11-02（万方平台首次上网日期，不代表论文的发表时间）