High-Power High-Efficiency Green LEDs
high-power green LEDs in mass-production is reaching a new WPE (wall-plug-efficiency) level of 35%,and this progress results from both band- and strain-engineering in the active multiple-quantum-well region and optimal p- and n- electrodes layout for uniform current spreading.For high-power green LEDs of chip size 45 mil×45 mil (4545 chips),the forward voltage at 350 mA is as low as 2.8 V,with emitting power of 345 mW and emitting flux of 152 lumen at a dominant wavelength of 525 nm.These data translate into an external quantum efficiency of 41.7% and a luminous efficacy of 153 lm/W,with peak luminous efficacy over 280lm/W.It is envisioned that these high-power highefficiency green LEDs will open up new market applications such as high-end healthy-lighting and mitigate the so-called “green-gap” for another level of the solid-state general lighting.
GaN Green LED luminous efficacy external quantum efficiency internal quantum efficiency current spreading strain piezoelectric field
Chris Yan Spring Bai Tim Nie Vincent Wang
InvenLux Technologies,1 Silver Beach Rd,the Grand Bridge Economic Development District,Haiyan,Zhejia Advanced Micro-Fabrication Equipment Inc.,188 Taihua Road,Jinqiao Export Processing Zone(South area)
国内会议
深圳
英文
1-4
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）