Low Turn-on Voltage AlGaN/GaN SBD Designed by Cascode
Due to the high Schottky barrier height,traditional AlGaN/GaN SBD always has large turn-on voltage.In this paper,a low turn-on voltage cascode AlGaN/GaN SBD Si realized.A commercial 60 V Si SBD and a high voltage AlGaN/GaN HEMT (>700 V) were used in the design.After co-packaged,the device shows a turn-on voltage with 0.26 V and the breakdown voltage can reach up to 800 V.The reversed recovery time of the cascode AlGaN/GaN SBD is about 37.8 nS,which almost the same with the 600 V commercial SiC SBD.Since the cascode AlGaN/GaN SBD has an obviously advantage on cost over SiC SBD,the results indicate that such a AlGaN/GaN SBD may come to provide a potential solution to some field of power management applications.
Lifang Jia Zhi He Yanan Liang Zhongchao Fan Yun Zhang Fuhua Yang Junxi Wang
Institute of Semiconductors,Chinese Academy of Sciences Beijing 100083,P.R.China
国内会议
深圳
英文
1-4
2015-11-02（万方平台首次上网日期，不代表论文的发表时间）